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| SI2312DS Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V ID (A) 4.9 4.4 3.9 TO-236 (SOT-23) G 1 3 D Ordering Information: SI2312DS-T1 S 2 Top View SI2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb L = 0 1 mH 0.1 Conduction)a TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 5 sec 20 "8 4.9 3.9 15 15 Steady State Unit V 3.77 3.0 A Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Power Dissipationa Operating Junction and Storage Temperature Range 11.25 1.0 1.25 0.80 -55 to 150 0.75 0.48 mJ A W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71338 S-31990--Rev. D, 13-Oct-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W C/W 1 SI2312DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 10 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.0 A VGS = 2.5 V, ID = 4.5 A VGS = 1.8 V, ID = 4.0 A VDS = 15 V, ID = 5.0 A IS = 1.0 A, VGS = 0 V 15 0.027 0.033 0.042 40 0.8 1.2 0.033 0.040 0.051 S V W 20 0.45 0.65 0.85 "100 1 75 V nA mA A Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 11.2 1.4 2.2 14.0 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time td(on) tr td(off) tf trr IF = 1.0 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1.0 A, VGEN = 4.5 V, RG = 6 W 15 40 48 31 13 25 60 70 45 25 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 4.5 thru 2.0 V 12 I D - Drain Current (A) 1.5 V I D - Drain Current (A) 12 15 Transfer Characteristics 9 9 6 6 TC = 125_C 3 25_C 0 0.0 -55_C 1.0 1.5 2.0 3 0.5 V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 1.0 V 0.5 VGS - Gate-to-Source Voltage (V) Document Number: 71338 S-31990--Rev. D, 13-Oct-03 www.vishay.com 2 SI2312DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.15 On-Resistance vs. Drain Current 1500 Capacitance r DS(on) - On-Resistance ( W ) 0.12 C - Capacitance (pF) 1200 Ciss 0.09 VGS = 1.8 V VGS = 2.5 V 900 0.06 600 0.03 VGS = 4.5 V 300 Coss Crss 0.00 0 3 6 9 12 15 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 8 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.0 A 6 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.0 A 1.4 r DS(on) - On-Resistance ( W) (Normalized) 8 12 16 20 1.2 4 1.0 2 0.8 0 0 4 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) 0.20 On-Resistance vs. Gate-to-Source Voltage ID = 5.0 A 0.15 I S - Source Current (A) TJ = 150_C 1 0.10 TJ = 25_C 0.1 0.05 0.01 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71338 S-31990--Rev. D, 13-Oct-03 www.vishay.com 3 SI2312DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) ID = 250 mA Power (W) -0.0 -0.1 -0.2 -0.3 -0.4 -50 8 6 4 2 TA = 25_C 12 10 Single Pulse Power 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71338 S-31990--Rev. D, 13-Oct-03 |
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